1MBH75D-060S molded igbt 600v / 75a molded package features small molded package low power loss soft switching with low switching surge and noise high reliability, high ruggedness (rbsoa, scsoa etc.) comprehensive line-up applications inverter for motor drive ac and dc servo drive amplifier uninterruptible power supply maximum ratings and characteristics absolute maximum ratings (tc=25c) equivalent circuit schematic item symbol collector-emitter voltage v ces gate-emitter voltaga v ges collector dc tc=25c i c25 current t c=100c i c100 1ms tc=25c icp max. power dissipation (igbt) p c max. power dissipation (fwd) p c operating temperature t j storage temperature t stg screw torque - rating 600 20 83 75 225 310 180 +150 -40 to +150 58.8 to 78.4 unit v v a a a w w c c ncm c:collector e:emitter g:gate igbt + fwd electrical characteristics (at tc=25c unless otherwise specified) item zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time switching time turn-on time turn-off time fwd forward on voltage reverse recovery time i ces i ges v ge(th) v ce(sat) c ies c oes c res t on * t r * t rr2 t off t f t on * t r * t rr2 t off t f v f t rr ? ? 1.0 ??10 4.0 5.0 6.0 ? 2.4 2.9 ? 3700 ? ? 350 ? ? 190 ? ? 0.15 ? ? 0.09 ? ? 0.03 ? ? 0.50 0.62 ? 0.10 0.17 ? 0.15 ? ? 0.09 ? ? 0.03 ? ? 0.50 0.62 ? 0.10 0.17 ? 2.0 2.5 ? 0.06 0.10 v ge =0v, v ce =600v v ce =0v, v ge =20v v ce =20v, i c =75ma v ge =15v, i c =75a v ge =0v v ce =25v f=1mhz v cc =300v, i c =75a v ge =15v r g =24 ohm (half bridge) inductance load v cc =300v, i c =75a v ge =+15v r g =6 ohm (half bridge) inductance load i f =75a, v ge =0v i f =75a, v ge =-10v, v r =300v, di/dt=100a/s ma a v v pf s s v s symbol characteristics conditions unit min. typ. max. * turn-on characteristics include trr2. see a figure in next page. thermal resistance characteristics thermal resistance ? ? 0.40 ? ? 0.69 igbt fwd c/w c/w item symbol characteristics conditions unit min. typ. max. rth(j-c) rth(j-c)
1MBH75D-060S molded igbt outline drawings, mm to-3pl gate collector emitter switching waveform (inductance load) mesurement circuit
characteristics 1MBH75D-060S molded igbt collector current vs. collector-emitter voltage tj=25c collector-emitter voltage : v ce (v) collector current : i c (a) collector current : i c (a) collector-emitter voltage : v ce (v) collector current vs. collector-emitter voltage tj=125c collector-emitter voltage vs. gate-emitter voltage tj=25c collector-emitter voltage vs. gate-emitter voltage tj=125c collector-emitter voltage : v ce (v) collector-emitter voltage : v ce (v) gate-emitter voltage : v ge (v) gate-emitter voltage : v ge (v) switching time vs. collector current v cc =300v, r g =6 ? , v ge =+15v, tj=125c switching time vs. collector current v cc =300v, r g =24 ? , v ge =15v, tj=125c switching time : tf,toff, tr, ton, trr2 (nsec) switching time : tf,toff, tr, ton, trr2 (nsec) collector current : i c (a) collector current : i c (a)
igbt module characteristics 1MBH75D-060S gate resistance : r g ( ? ) switching time vs. r g v cc =300v, i c =75a, v ge =+15v, tj=125c switching time : tf,toff, tr, ton, trr2 (nsec) gate resistance : r g ( ? ) switching time : tf,toff, tr, ton, trr2 (nsec) switching time vs. r g v cc =300v, i c =75a, v ge = 15v, tj=125c dynamic input characteristics tj=25c collector-emitter voltage : v ce (v) gate charge : qg (nc) capacitance vs. collector-emitter voltage tj=25c capacitance : cies, coes, cres (nf) collector-emitter voltage : v ce (v) reverse biased safe operating area r g =6 ? , +v ge 20v, -v ge =15v, tj 125c = < = < collector current : i c (a) collector-emitter voltage : v ce (v) collector-emitter voltage : v ce (v) collector current : i c (a) forward bias safe operating area gate-emitter voltage : v ge (v)
igbt module characteristics 1MBH75D-060S reverse recovery time vs. forward current v r =300v, -di/dt=100a/sec reverse recovery time : trr [nsec] forward current : i f ( ) forward current : i f ( ) reverse recovery current : irr [a] forward voltage vs. forward current forward current : i f [a] forward voltage : v f (v) reverse recovery chracteristics vs. -di/dt v r =300v, i f =75a, tj=125c reverse recovery time : trr [nsec] -di/dt [ / sec] reverse recovery current : irr [a] transient thermal resistance reverse recovery current vs. forward current v r =300v, -di/dt=100a/sec thermal resistance : rth(j-c) [c/w] pulse width : p w (sec)
|
